Dalies numeris HN1A01FE-GR,LF Kategorijos Bipolar Transistors - BJT RoHS Duomenų lapas HN1A01FE-GR,LF apibūdinimas Bipolar Transistors - BJT Bias Resistor Built-in transistor
Kategorijos Bipolar Transistors - BJT Collector- Base Voltage VCBO - 50 V Collector- Emitter Voltage VCEO Max - 50 V Collector-Emitter Saturation Voltage - 0.3 V Continuous Collector Current - 150 mA DC Collector/Base Gain hfe Min 120 DC Current Gain hFE Max 400 Emitter- Base Voltage VEBO - 5 V Gain Bandwidth Product fT 80 MHz Maximum DC Collector Current - 150 mA Mounting Style SMD/SMT Package / Case ES6-6 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 100 mW Product Type BJTs - Bipolar Transistors Series HN1A01 Technology SI Transistor Polarity PNP