Dalies numeris NJD2873T4G Kategorijos Bipolar Transistors - BJT RoHS Duomenų lapas NJD2873T4G apibūdinimas Bipolar Transistors - BJT 2A 50V 12.5W NPN
Kategorijos Bipolar Transistors - BJT Collector- Base Voltage VCBO 50 V Collector- Emitter Voltage VCEO Max 50 V Collector-Emitter Saturation Voltage 0.3 V Configuration Single Continuous Collector Current 2 A DC Collector/Base Gain hfe Min 120 Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 65 MHz Height 2.38 mm Length 6.73 mm Maximum DC Collector Current 2 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 65 C Mounting Style SMD/SMT Package / Case TO-252-3 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 15 W Product Type BJTs - Bipolar Transistors Series NJD2873 Technology SI Transistor Polarity NPN Width 6.22 mm