Dalies numeris F4-50R12KS4 Kategorijos IGBT Modules RoHS Duomenų lapas F4-50R12KS4 apibūdinimas IGBT Modules N-CH 1.2KV 70A
Kategorijos IGBT Modules Collector- Emitter Voltage VCEO Max 1200 V Collector-Emitter Saturation Voltage 3.75 V Configuration Quad Continuous Collector Current at 25 C 70 A Gate-Emitter Leakage Current 400 nA Height 17 mm Length 107.5 mm Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 125 C Minimum Operating Temperature - 40 C Mounting Style Chassis Mount Package / Case Econo 2 Packaging Tray Part # Aliases Pd - Power Dissipation 355 W Product IGBT Silicon Modules Product Type IGBT Modules Technology SI Unit Weight Width 45 mm