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SQ3419AEEV-T1_GE3

SQ3419AEEV-T1_GE3
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Dalies numeris
SQ3419AEEV-T1_GE3
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET -40V Vds TSOP-6 AEC-Q101 Qualified
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
31 ns
Id - Continuous Drain Current
6.9 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TSOP-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
5 W
Product Type
MOSFET
Qg - Gate Charge
12.5 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
48 mOhms
Rise Time
24 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
26 ns
Typical Turn-On Delay Time
9 ns
Vds - Drain-Source Breakdown Voltage
40 V
Vgs - Gate-Source Voltage
12 V
Vgs th - Gate-Source Threshold Voltage
1.5 V

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Teşekkürler
My package arrived wet, not know where occurs this fact, but working all right
Takes 8 days to Japan. Good!
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
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