Dalies numeris J113 Kategorijos JFET RoHS Duomenų lapas J113 apibūdinimas JFET N-Ch JFET -35V -3Vds 50mA 360mW 3.27mW
Kategorijos JFET Configuration Single Drain-Source Current at Vgs=0 2 mA Gate-Source Cutoff Voltage - 3 V Mounting Style Through Hole Package / Case TO-92-3 Packaging Bulk Pd - Power Dissipation 360 mW Rds On - Drain-Source Resistance 100 Ohms Technology SI Transistor Polarity N-Channel Type JFET Vgs - Gate-Source Breakdown Voltage - 35 V