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RQ3C150BCTB

RQ3C150BCTB
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Dalies numeris
RQ3C150BCTB
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET Pch -20V -30A Si MOSFET
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
280 ns
Forward Transconductance - Min
25 s
Id - Continuous Drain Current
30 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
HSMT-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
20 W
Product Type
MOSFET
Qg - Gate Charge
60 nC
Rds On - Drain-Source Resistance
4.8 mOhms
Rise Time
80 ns
Technology
SI
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
300 ns
Typical Turn-On Delay Time
26 ns
Vds - Drain-Source Breakdown Voltage
20 V
Vgs - Gate-Source Voltage
8 V
Vgs th - Gate-Source Threshold Voltage
1.2 V

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Naujausios apžvalgos

Parašykite savo atgaivinimą
Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!
Quick delivery. Secure packing. Excellent product. Thank you
Takes 8 days to Japan. Good!
Yes, they are all here. :)
Works. Find the price of this product is very good
Daugiau

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RQ3C150BCTB
RQ3C150BCTB
Mėgstamiausia Į Bom

Žmonės žiūri RQ3C150BCTB tada nusipirko

RQ3C150BCTB
RQ3C150BCTB
Mėgstamiausia Į Bom

RQ3C150BCTB Naujienos

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