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UF3C065080K3S

UF3C065080K3S
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Dalies numeris
UF3C065080K3S
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET 650V/80mOhm SiC FAST CASCODE G3 REDUCED Rth
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
11 ns
Id - Continuous Drain Current
31 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-247-3
Packaging
Tube
Pd - Power Dissipation
190 W
Product Type
MOSFET
Qg - Gate Charge
51 nC
Rds On - Drain-Source Resistance
100 MOhms
Rise Time
14 ns
Series
UF3C
Technology
SiC
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
54 ns
Typical Turn-On Delay Time
25 ns
Vds - Drain-Source Breakdown Voltage
650 V
Vgs - Gate-Source Voltage
12 V
Vgs th - Gate-Source Threshold Voltage
6 V

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Naujausios apžvalgos

Parašykite savo atgaivinimą
High Quality driver, works excellent. It came to Moscow for 7 days.
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
fast delivery
The timer is running. 10 PCS. Packed properly.
Seems well have not tested
Daugiau

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UF3C065080K3S Naujienos

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Susiję raktiniai žodžiai UF3C

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  • UF3C065080K3S PDF
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  • UF3C065080K3S Specifikacija
  • UF3C065080K3S Karšti pasiūlymai
  • UF3C065080K3S Pertraukos kaina
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