Dalies numeris SQ4080EY-T1_GE3 Kategorijos MOSFET RoHS Duomenų lapas SQ4080EY-T1_GE3 apibūdinimas MOSFET N-Channel 150V SO-8
Kategorijos MOSFET Channel Mode Enhancement Configuration Single Fall Time 2.5 ns Forward Transconductance - Min 51 S Id - Continuous Drain Current 18 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SO-8 Packaging Reel Packaging Cut Tape Pd - Power Dissipation 7.1 W Product Type MOSFET Qg - Gate Charge 33 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 70 mOhms Rise Time 3.2 ns Series SQ Technology SI Tradename TrenchFET Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 19.1 ns Typical Turn-On Delay Time 11.4 ns Unit Weight Vds - Drain-Source Breakdown Voltage 150 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V