Dalies numeris IF1322A Kategorijos JFET RoHS Duomenų lapas IF1322A apibūdinimas JFET N-Ch Matched -20V 10mA 480mW 3.8mW
Kategorijos JFET Configuration Dual Drain-Source Current at Vgs=0 25 mA Forward Transconductance - Min 0.01 mS Gate-Source Cutoff Voltage - 1.5 V Id - Continuous Drain Current 1 uA Maximum Operating Temperature + 150 C Mounting Style SMD/SMT Package / Case SOIC-8 Packaging Bulk Pd - Power Dissipation 480 mW Series IF132 Technology SI Transistor Polarity N-Channel Type JFET Unit Weight Vds - Drain-Source Breakdown Voltage 10 V Vgs - Gate-Source Breakdown Voltage - 20 V