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HUF75631S3ST

HUF75631S3ST
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Dalies numeris
HUF75631S3ST
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET 100V NCh PowerMOSFET UltraFET
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
55 ns
Height
4.83 mm
Id - Continuous Drain Current
33 A
Length
10.67 mm
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TO-263-3
Packaging
Cut Tape
Packaging
MouseReel
Packaging
Reel
Part # Aliases
Pd - Power Dissipation
120 W
Product Type
MOSFET
Rds On - Drain-Source Resistance
40 mOhms
Rise Time
57 ns
Series
HUF75631S3S
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Type
MOSFET
Typical Turn-Off Delay Time
40 ns
Typical Turn-On Delay Time
9.5 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
100 V
Vgs - Gate-Source Voltage
20 V
Width
9.65 mm

„Porduct“ kategorija

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Naujausios apžvalgos

Parašykite savo atgaivinimą
packed pretty good, all is ok,-seller.
Everything is excellent! recommend this seller!
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Shipping a little 1 weeks, normal packing, the procedure is complete.
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
Daugiau

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HUF75631S3ST Naujienos

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  • HUF75631S3ST Specifikacija
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  • HUF75631S3ST Pertraukos kaina
  • HUF75631S3ST Techniniai duomenys

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