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UF3C065080K4S

UF3C065080K4S
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Dalies numeris
UF3C065080K4S
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET 650V 80mOhm SiC Cascode Fast
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
8 ns
Id - Continuous Drain Current
31 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-247-4
Packaging
Tube
Pd - Power Dissipation
190 W
Product Type
MOSFET
Qg - Gate Charge
51 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
100 MOhms
Rise Time
20 ns
Series
UF3C
Technology
SiC
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
37 ns
Typical Turn-On Delay Time
21 ns
Vds - Drain-Source Breakdown Voltage
650 V
Vgs - Gate-Source Voltage
25 V
Vgs th - Gate-Source Threshold Voltage
4 V

„Porduct“ kategorija

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Naujausios apžvalgos

Parašykite savo atgaivinimą
Hello! Order received, very happy. Thank you very much!
Everything is excellent! recommend this seller!
Decent quality, not минвелл certainly, but enough decent
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Fast shippng. Good quality. I recomend this seller.
Daugiau

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UF3C065080K4S Naujienos

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Susiję raktiniai žodžiai UF3C

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  • UF3C065080K4S Platintojas
  • UF3C065080K4S PDF
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  • UF3C065080K4S Specifikacija
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  • UF3C065080K4S Pertraukos kaina
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