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RU1E002SPTCL

RU1E002SPTCL
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Dalies numeris
RU1E002SPTCL
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET 4V Drive Pch MOSFET Drive Pch
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
23 ns
Id - Continuous Drain Current
250 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-323FL-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
200 mW
Product Type
MOSFET
Rds On - Drain-Source Resistance
900 mOhms
Rise Time
6 ns
Series
RU1E002SP
Technology
SI
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
20 ns
Typical Turn-On Delay Time
4 ns
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V

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Naujausios apžvalgos

Parašykite savo atgaivinimą
My package arrived wet, not know where occurs this fact, but working all right
Quick delivery. Secure packing. Excellent product. Thank you
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
Everything is fine!
Daugiau

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RU1E002SPTCL
RU1E002SPTCL
Mėgstamiausia Į Bom

Žmonės žiūri RU1E002SPTCL tada nusipirko

RU1E002SPTCL
RU1E002SPTCL
Mėgstamiausia Į Bom

RU1E002SPTCL Naujienos

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