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TK12Q60W,S1VQ

TK12Q60W,S1VQ
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Dalies numeris
TK12Q60W,S1VQ
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET DTMOSIV 600V 340mOhm 11.5A 100W 890pF
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Specifikacijos

Kategorijos
MOSFET
Configuration
Single
Fall Time
5.5 ns
Height
6.1 mm
Id - Continuous Drain Current
11.5 A
Length
6.65 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-251-3
Packaging
Reel
Pd - Power Dissipation
100 W
Product Type
MOSFET
Qg - Gate Charge
25 nC
Rds On - Drain-Source Resistance
265 mOhms
Rise Time
23 ns
Series
TK12Q60W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
85 ns
Typical Turn-On Delay Time
45 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
3.7 V
Width
2.3 mm

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Naujausios apžvalgos

Parašykite savo atgaivinimą
it is safe and sound all, thank you seller!
Everything is excellent! recommend this seller!
Works. Find the price of this product is very good
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
Daugiau

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