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TK12P60W,RVQ

TK12P60W,RVQ
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Dalies numeris
TK12P60W,RVQ
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET DTMOSIV 600V 340mOhm 115A 100W 890pF 25nC
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Specifikacijos

Kategorijos
MOSFET
Configuration
Single
Fall Time
5.5 ns
Height
2.3 mm
Id - Continuous Drain Current
11.5 A
Length
6.5 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TO-252-3
Packaging
Reel
Pd - Power Dissipation
100 W
Product Type
MOSFET
Qg - Gate Charge
25 nC
Rds On - Drain-Source Resistance
340 mOhms
Rise Time
23 ns
Series
TK12P60W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
85 ns
Typical Turn-On Delay Time
45 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
3.7 V
Width
5.5 mm

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Naujausios apžvalgos

Parašykite savo atgaivinimą
My package arrived wet, not know where occurs this fact, but working all right
Hello! Order received, very happy. Thank you very much!
packed pretty good, all is ok,-seller.
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Daugiau

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