Dalies numeris ZDT6790TA Kategorijos Bipolar Transistors - BJT RoHS Duomenų lapas ZDT6790TA apibūdinimas Bipolar Transistors - BJT NPN/PNP HighG 40V
Kategorijos Bipolar Transistors - BJT Collector- Base Voltage VCBO 45 V, 50 V Collector- Emitter Voltage VCEO Max 45 V, 40 V Collector-Emitter Saturation Voltage 500 mV Configuration Dual Continuous Collector Current 2 A DC Collector/Base Gain hfe Min 500 at 100 mA, 2 V at NPN, 400 at 1 A, 2 V at NPN, 150 at 2 A, 2 V at NPN, 300 at 10 mA, 2 V at PNP, 250 at 500 mA, 2 V at PNP, 200 at 1 A, 2 V at PNP, 150 at 2 A, 2 V at PNP DC Current Gain hFE Max 500 Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 150 MHz Height 1.6 mm Length 6.7 mm Maximum DC Collector Current 2 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case SM-8 Packaging MouseReel Packaging Reel Packaging Cut Tape Pd - Power Dissipation 2.75 W Product Type BJTs - Bipolar Transistors Series ZDT6790 Technology SI Transistor Polarity NPN, PNP Width 3.7 mm