Dalies numeris BC 848B E6327 Kategorijos Bipolar Transistors - BJT RoHS Duomenų lapas BC 848B E6327 apibūdinimas Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR
Kategorijos Bipolar Transistors - BJT Collector- Base Voltage VCBO 30 V Collector- Emitter Voltage VCEO Max 30 V Collector-Emitter Saturation Voltage 200 mV Configuration Single Continuous Collector Current 100 mA DC Collector/Base Gain hfe Min 200 DC Current Gain hFE Max 450 Emitter- Base Voltage VEBO 6 V Gain Bandwidth Product fT 250 MHz Height 1 mm Length 2.9 mm Maximum DC Collector Current 200 mA Maximum Operating Temperature + 150 C Minimum Operating Temperature - 65 C Mounting Style SMD/SMT Package / Case SOT-23-3 Packaging Reel Packaging Cut Tape Packaging MouseReel Part # Aliases Pd - Power Dissipation 330 mW Product Type BJTs - Bipolar Transistors Series BC848 Technology SI Transistor Polarity NPN Unit Weight Width 1.3 mm