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BC 850C E6327

BC 850C E6327
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Specifikacijos

Kategorijos
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
50 V
Collector- Emitter Voltage VCEO Max
45 V
Collector-Emitter Saturation Voltage
200 mV
Configuration
Dual
Continuous Collector Current
100 mA
DC Collector/Base Gain hfe Min
420
DC Current Gain hFE Max
800
Emitter- Base Voltage VEBO
6 V
Gain Bandwidth Product fT
250 MHz
Height
1 mm
Length
2.9 mm
Maximum DC Collector Current
200 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Package / Case
SOT-23-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
330 mW
Product Type
BJTs - Bipolar Transistors
Qualification
AEC-Q101
Series
BC850
Technology
SI
Transistor Polarity
NPN
Unit Weight
Width
1.3 mm

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