Dalies numeris BC 858C E6327 Kategorijos Bipolar Transistors - BJT RoHS Duomenų lapas BC 858C E6327 apibūdinimas Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR
Kategorijos Bipolar Transistors - BJT Collector- Base Voltage VCBO 30 V Collector- Emitter Voltage VCEO Max 30 V Collector-Emitter Saturation Voltage 250 mV Configuration Dual Continuous Collector Current 100 mA DC Collector/Base Gain hfe Min 420 DC Current Gain hFE Max 800 Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 250 MHz Height 1 mm Length 2.9 mm Maximum DC Collector Current 200 mA Maximum Operating Temperature + 150 C Minimum Operating Temperature - 65 C Mounting Style SMD/SMT Package / Case SOT-23-3 Packaging Reel Packaging Cut Tape Packaging MouseReel Part # Aliases Pd - Power Dissipation 330 mW Product Type BJTs - Bipolar Transistors Series BC858 Technology SI Transistor Polarity PNP Unit Weight Width 1.3 mm