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SQ3585EV-T1_GE3

SQ3585EV-T1_GE3
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Dalies numeris
SQ3585EV-T1_GE3
Kategorijos
MOSFET
RoHS
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apibūdinimas
MOSFET N Ch 20Vds 12Vgs AEC-Q101 Qualified
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
8 ns, 14 ns
Forward Transconductance - Min
10 S, 3 S
Id - Continuous Drain Current
3.57 A, 2.5 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
TSOP-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
1.67 W
Product Type
MOSFET
Qg - Gate Charge
2.5 nC, 3.5 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
49 mOhms, 140 mOhms
Rise Time
15 ns, 16 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel, P-Channel
Transistor Type
1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time
22 ns, 29 ns
Typical Turn-On Delay Time
9 ns, 7 ns
Vds - Drain-Source Breakdown Voltage
20 V
Vgs - Gate-Source Voltage
12 V
Vgs th - Gate-Source Threshold Voltage
600 mV, 1.5 V

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Naujausios apžvalgos

Parašykite savo atgaivinimą
goods very well received very good quality
Quick delivery. Secure packing. Excellent product. Thank you
packed pretty good, all is ok,-seller.
Works. Find the price of this product is very good
High Quality driver, works excellent. It came to Moscow for 7 days.
Daugiau

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SQ3585EV-T1_GE3
SQ3585EV-T1_GE3
Mėgstamiausia Į Bom

Žmonės žiūri SQ3585EV-T1_GE3 tada nusipirko

SQ3585EV-T1_GE3
SQ3585EV-T1_GE3
Mėgstamiausia Į Bom

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