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SQ4153EY-T1_GE3

SQ4153EY-T1_GE3
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Dalies numeris
SQ4153EY-T1_GE3
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET P Ch -12Vds 8Vgs AEC-Q101 Qualified
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
283 ns
Forward Transconductance - Min
54 S
Id - Continuous Drain Current
25 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SO-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
7.1 W
Product Type
MOSFET
Qg - Gate Charge
151 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
5.1 mOhms
Rise Time
168 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
310 ns
Typical Turn-On Delay Time
31 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
12 V
Vgs - Gate-Source Voltage
8 V
Vgs th - Gate-Source Threshold Voltage
900 mV

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Naujausios apžvalgos

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goods very well received very good quality
fast delivery, item as described, thanks!!
Received, Fast shipping, not checked yet
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
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