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SQ2303ES-T1_GE3

SQ2303ES-T1_GE3
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Dalies numeris
SQ2303ES-T1_GE3
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET P-Channel 30V AEC-Q101 Qualified
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
8 ns
Forward Transconductance - Min
4 s
Id - Continuous Drain Current
2.5 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-23-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
1.9 W
Product Type
MOSFET
Qg - Gate Charge
4.5 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
170 mOhms
Rise Time
8 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
12 ns
Typical Turn-On Delay Time
5 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
1.5 V

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Naujausios apžvalgos

Parašykite savo atgaivinimą
it is safe and sound all, thank you seller!
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Shipping a little 1 weeks, normal packing, the procedure is complete.
the photo in comparison with cheap. Delivery fast
Everything is fine!
Daugiau

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