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RQ6C050BCTCR

RQ6C050BCTCR
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Dalies numeris
RQ6C050BCTCR
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET Pch -20V -5A Si MOSFET
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
65 ns
Forward Transconductance - Min
5.5 S
Id - Continuous Drain Current
5 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-457-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
1.25 W
Product Type
MOSFET
Qg - Gate Charge
10.4 nC
Rds On - Drain-Source Resistance
27 mOhms
Rise Time
32 ns
Technology
SI
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
70 ns
Typical Turn-On Delay Time
11 ns
Vds - Drain-Source Breakdown Voltage
20 V
Vgs - Gate-Source Voltage
8 V
Vgs th - Gate-Source Threshold Voltage
1.2 V

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