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RQ6L020SPTCR

RQ6L020SPTCR
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Dalies numeris
RQ6L020SPTCR
Kategorijos
MOSFET
RoHS
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apibūdinimas
MOSFET Pch -60V 2A 1.25W SOT-457T
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
10 ns
Forward Transconductance - Min
2.5 s
Id - Continuous Drain Current
2 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-475T-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
1.25 W
Product Type
MOSFET
Qg - Gate Charge
7.2 nC
Rds On - Drain-Source Resistance
210 mOhms
Rise Time
12 ns
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
45 ns
Typical Turn-On Delay Time
9 ns
Vds - Drain-Source Breakdown Voltage
60 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
- 3 V

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RQ6L020SPTCR
RQ6L020SPTCR
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RQ6L020SPTCR
RQ6L020SPTCR
Mėgstamiausia Į Bom

RQ6L020SPTCR Naujienos

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