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UF3C120040K4S

UF3C120040K4S
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Dalies numeris
UF3C120040K4S
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET 1200V 35mOhm SiC Cascode Fast
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
10 ns
Id - Continuous Drain Current
65 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-247-4
Packaging
Tube
Pd - Power Dissipation
429 W
Product Type
MOSFET
Qg - Gate Charge
51 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
45 mOhms
Rise Time
27 ns
Series
UF3C
Technology
SiC
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
50 ns
Typical Turn-On Delay Time
24 ns
Vds - Drain-Source Breakdown Voltage
1200 V
Vgs - Gate-Source Voltage
25 V
Vgs th - Gate-Source Threshold Voltage
4 V

„Porduct“ kategorija

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Naujausios apžvalgos

Parašykite savo atgaivinimą
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Decent quality, not минвелл certainly, but enough decent
Shipping a little 1 weeks, normal packing, the procedure is complete.
Works. Recommend
Looks good
Daugiau

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UF3C120040K4S Naujienos

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  • UF3C120040K4S Specifikacija
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