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SQ4917EY-T1_GE3

SQ4917EY-T1_GE3
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Dalies numeris
SQ4917EY-T1_GE3
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET Dual P-Channel 60V AEC-Q101 Qualified
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
6 ns, 6 ns
Forward Transconductance - Min
13 S, 13 S
Id - Continuous Drain Current
8 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
SO-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
5 W
Product Type
MOSFET
Qg - Gate Charge
65 nC, 65 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
40 mOhms, 40 mOhms
Rise Time
11 ns, 11 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
P-Channel
Transistor Type
2 P-Channel
Typical Turn-Off Delay Time
35 ns, 35 ns
Typical Turn-On Delay Time
11 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
60 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V

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Naujausios apžvalgos

Parašykite savo atgaivinimą
Takes 8 days to Japan. Good!
it is safe and sound all, thank you seller!
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
The goods are OK, thank you dealers.
I received the product right, thank you very much 2018/12/03 ★★★★★
Daugiau

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Susiję raktiniai žodžiai SQ49

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