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TK12E80W,S1X

TK12E80W,S1X
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Dalies numeris
TK12E80W,S1X
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET N-Ch 800V 1400pF 23nC 11.5A 165W
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
11 ns
Id - Continuous Drain Current
11.5 A
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220-3
Pd - Power Dissipation
165 W
Product Type
MOSFET
Qg - Gate Charge
23 nC
Rds On - Drain-Source Resistance
380 mOhms
Rise Time
40 ns
Series
TK12E80W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
130 ns
Typical Turn-On Delay Time
70 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
800 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
3 V

„Porduct“ kategorija

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Naujausios apžvalgos

Parašykite savo atgaivinimą
Thank You all fine, packed very well
Everything is excellent! recommend this seller!
Seems well have not tested
and whole all right. the features no more функционалу check.
Product as shown in the description, excellent seller, I recommend this seller.
Daugiau

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Susiję raktiniai žodžiai TK12

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  • TK12E80W,S1X 1 dalis. \ T
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  • TK12E80W,S1X Platintojas
  • TK12E80W,S1X PDF
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  • TK12E80W,S1X Atsisiųsti PDF
  • TK12E80W,S1X Atsisiųsti duomenų lapą
  • TK12E80W,S1X Tiekimas
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  • TK12E80W,S1X Švinas nemokamai
  • TK12E80W,S1X Specifikacija
  • TK12E80W,S1X Karšti pasiūlymai
  • TK12E80W,S1X Pertraukos kaina
  • TK12E80W,S1X Techniniai duomenys

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