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UF3C120080K4S

UF3C120080K4S
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Dalies numeris
UF3C120080K4S
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET 1200V 80mOhm SiC Cascode Fast
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
10 ns
Id - Continuous Drain Current
33 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-247-4
Packaging
Tube
Pd - Power Dissipation
254.2 W
Product Type
MOSFET
Qg - Gate Charge
51 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
100 MOhms
Rise Time
13 ns
Series
UF3C
Technology
SiC
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
43 ns
Typical Turn-On Delay Time
33 ns
Vds - Drain-Source Breakdown Voltage
1200 V
Vgs - Gate-Source Voltage
25 V
Vgs th - Gate-Source Threshold Voltage
4 V

„Porduct“ kategorija

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Naujausios apžvalgos

Parašykite savo atgaivinimą
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Works. Find the price of this product is very good
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
Daugiau

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UF3C120080K4S Naujienos

03/15/2023
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Susiję raktiniai žodžiai UF3C

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  • UF3C120080K4S 1 dalis. \ T
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  • UF3C120080K4S PDF
  • UF3C120080K4S Komponentas
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  • UF3C120080K4S Atsisiųsti PDF
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  • UF3C120080K4S Specifikacija
  • UF3C120080K4S Karšti pasiūlymai
  • UF3C120080K4S Pertraukos kaina
  • UF3C120080K4S Techniniai duomenys

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