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SQ4284EY-T1_GE3

SQ4284EY-T1_GE3
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Dalies numeris
SQ4284EY-T1_GE3
Kategorijos
MOSFET
RoHS
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apibūdinimas
MOSFET 40V 8A 3.9W AEC-Q101 Qualified
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
11 ns, 11 ns
Forward Transconductance - Min
30 S, 30 S
Id - Continuous Drain Current
8 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
SO-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
3.9 W
Product Type
MOSFET
Qg - Gate Charge
45 nC, 45 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
11.2 mOhms
Rise Time
40 ns, 40 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel
Transistor Type
2 N-Channel
Typical Turn-Off Delay Time
32 ns, 32 ns
Typical Turn-On Delay Time
10 ns, 10 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
40 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1.5 V

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Naujausios apžvalgos

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everything as it is written in the description of the same deductible prodovtsu deserved
Quick delivery. Secure packing. Excellent product. Thank you
it is safe and sound all, thank you seller!
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
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SQ4282EY-T1_GE3
SQ4282EY-T1_GE3
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SQ4284EY-T1_GE3
SQ4284EY-T1_GE3
Mėgstamiausia Į Bom

Žmonės žiūri SQ4284EY-T1_GE3 tada nusipirko

SQ4282EY-T1_GE3
SQ4282EY-T1_GE3
Mėgstamiausia Į Bom
SQ4284EY-T1_GE3
SQ4284EY-T1_GE3
Mėgstamiausia Į Bom

SQ4284EY-T1_GE3 Naujienos

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