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SQ4425EY-T1_GE3

SQ4425EY-T1_GE3
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Dalies numeris
SQ4425EY-T1_GE3
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET P-Channel 30V AEC-Q101 Qualified
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
13 ns
Height
1.75 mm
Id - Continuous Drain Current
18 A
Length
4.9 mm
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SO-8
Packaging
Cut Tape
Packaging
Reel
Pd - Power Dissipation
6.8 W
Product Type
MOSFET
Qg - Gate Charge
50 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
9 mOhms
Rise Time
9 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
54 ns
Typical Turn-On Delay Time
12 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V
Width
3.9 mm

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Naujausios apžvalgos

Parašykite savo atgaivinimą
High Quality driver, works excellent. It came to Moscow for 7 days.
The goods are OK, thank you dealers.
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
the photo in comparison with cheap. Delivery fast
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Susiję raktiniai žodžiai SQ44

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  • SQ4425EY-T1_GE3 Specifikacija
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