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TK17A80W,S4X

TK17A80W,S4X
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Dalies numeris
TK17A80W,S4X
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET N-Ch 800V 2050pF 32nC 17A 45W
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
7 ns
Height
15 mm
Id - Continuous Drain Current
17 A
Length
10 mm
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220FP-3
Packaging
Tube
Pd - Power Dissipation
45 W
Product Type
MOSFET
Qg - Gate Charge
32 nC
Rds On - Drain-Source Resistance
250 mOhms
Rise Time
24 ns
Series
TK17A80W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
80 ns
Typical Turn-On Delay Time
58 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
800 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
3 V
Width
4.5 mm

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Naujausios apžvalgos

Parašykite savo atgaivinimą
goods very well received very good quality
Quickly came to CET, all in one package. Look at the rules
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
High Quality driver, works excellent. It came to Moscow for 7 days.
Everything is fine!
Daugiau

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