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SQ1563AEH-T1_GE3

SQ1563AEH-T1_GE3
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Dalies numeris
SQ1563AEH-T1_GE3
Kategorijos
MOSFET
RoHS
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apibūdinimas
MOSFET N Ch 20Vds 8Vgs AEC-Q101 Qualified
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
17 ns, 20 ns
Forward Transconductance - Min
2.6 S, 1.5 S
Id - Continuous Drain Current
850 mA
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
SOT-363-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
1.5 W
Product Type
MOSFET
Qg - Gate Charge
930 pC, 1 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
150 mOhms, 500 mOhms
Rise Time
21 ns, 22 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel, P-Channel
Transistor Type
1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time
20 ns, 28 ns
Typical Turn-On Delay Time
3 ns, 2 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
20 V
Vgs - Gate-Source Voltage
8 V
Vgs th - Gate-Source Threshold Voltage
450 mV, 1.5 V

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Naujausios apžvalgos

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Teşekkürler
fast delivery, item as described, thanks!!
Works. Find the price of this product is very good
the photo in comparison with cheap. Delivery fast
The timer is running. 10 PCS. Packed properly.
Daugiau

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Žmonės žiūri SQ1563AEH-T1_GE3 tada nusipirko

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