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R8010ANX

R8010ANX
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Dalies numeris
R8010ANX
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET 10V Drive Nch MOSFET
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
25 ns
Forward Transconductance - Min
2.2 S
Height
4.8 mm
Id - Continuous Drain Current
10 A
Length
15.4 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220FP-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
40 W
Product
MOSFET
Product Type
MOSFET
Qg - Gate Charge
62 nC
Rds On - Drain-Source Resistance
560 mOhms
Rise Time
54 ns
Series
R8010ANX
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Type
Power MOSFET
Typical Turn-Off Delay Time
97 ns
Typical Turn-On Delay Time
43 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
800 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
3 V
Width
10.3 mm

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Naujausios apžvalgos

Parašykite savo atgaivinimą
Properly packed, not damaged. Works well, voltage levels are stable. Recommend.
goods very well received very good quality
Hello! Order received, very happy. Thank you very much!
Thank You all fine, packed very well
High Quality driver, works excellent. It came to Moscow for 7 days.
Daugiau

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R8010ANX
R8010ANX
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R8010ANX
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R8010ANX Naujienos

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