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TK11P65W,RQ

TK11P65W,RQ
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Dalies numeris
TK11P65W,RQ
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET Power MOSFET N-Channel
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
5.5 ns
Height
2.3 mm
Id - Continuous Drain Current
11.1 A
Length
6.5 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TO-252-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
100 W
Product Type
MOSFET
Qg - Gate Charge
25 nC
Rds On - Drain-Source Resistance
350 mOhms
Rise Time
23 ns
Series
TK11P65W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Typical Turn-Off Delay Time
85 ns
Typical Turn-On Delay Time
45 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
650 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
2.5 V
Width
5.5 mm

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Naujausios apžvalgos

Parašykite savo atgaivinimą
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Decent quality, not минвелл certainly, but enough decent
Goods came in two weeks. Well packed. Track number tracked
Shipping a little 1 weeks, normal packing, the procedure is complete.
Works. Recommend
Daugiau

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