Dalies numeris SQ9407EY-T1_GE3 Kategorijos MOSFET RoHS Duomenų lapas SQ9407EY-T1_GE3 apibūdinimas MOSFET -60V -4.6A 3.75W AEC-Q101 Qualified
Kategorijos MOSFET Channel Mode Enhancement Configuration Single Fall Time 8 ns Forward Transconductance - Min 10 s Id - Continuous Drain Current 4.6 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SO-8 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 3.75 W Product Type MOSFET Qg - Gate Charge 40 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 67 mOhms Rise Time 13 ns Series SQ Technology SI Tradename TrenchFET Transistor Polarity P-Channel Transistor Type 1 P-Channel Typical Turn-Off Delay Time 36 ns Typical Turn-On Delay Time 11 ns Unit Weight Vds - Drain-Source Breakdown Voltage 60 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V