Dalies numeris UM6K1NTN Kategorijos MOSFET RoHS Duomenų lapas UM6K1NTN apibūdinimas MOSFET 2N-CH 30V .1A SOT-363
Kategorijos MOSFET Channel Mode Enhancement Configuration Dual Fall Time 80 ns Height 0.9 mm Id - Continuous Drain Current 100 mA Length 2 mm Maximum Operating Temperature + 150 C Mounting Style SMD/SMT Number of Channels 2 Channel Package / Case SOT-363-6 Packaging Cut Tape Packaging MouseReel Packaging Reel Part # Aliases Pd - Power Dissipation 150 mW Product MOSFET Small Signal Product Type MOSFET Rds On - Drain-Source Resistance 8 Ohms Rise Time 35 ns Series UM6K1N Technology SI Transistor Polarity N-Channel Transistor Type 2 N-Channel MOSFET Type MOSFET Typical Turn-Off Delay Time 80 ns Typical Turn-On Delay Time 15 ns Unit Weight Vds - Drain-Source Breakdown Voltage 30 V Vgs - Gate-Source Voltage 4 V Vgs th - Gate-Source Threshold Voltage 800 mV Width 1.25 mm