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TK100A06N1,S4X

TK100A06N1,S4X
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Dalies numeris
TK100A06N1,S4X
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET MOSFET NCh 2.2ohm VGS10V10uAVDS60V
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Height
15 mm
Id - Continuous Drain Current
100 A
Length
10 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220FP-3
Pd - Power Dissipation
45 W
Product Type
MOSFET
Qg - Gate Charge
140 nC
Rds On - Drain-Source Resistance
2.2 mOhms
Series
TK100A06N1
Technology
SI
Tradename
U-MOSVIII-H
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Unit Weight
Vds - Drain-Source Breakdown Voltage
60 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
4 V
Width
4.5 mm

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Naujausios apžvalgos

Parašykite savo atgaivinimą
fast delivery, item as described, thanks!!
Takes 8 days to Japan. Good!
packed pretty good, all is ok,-seller.
Shipping a little 1 weeks, normal packing, the procedure is complete.
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
Daugiau

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  • TK100A06N1,S4X PDF
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  • TK100A06N1,S4X Specifikacija
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