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SI1012X-T1-GE3

SI1012X-T1-GE3
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Dalies numeris
SI1012X-T1-GE3
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET 20V 0.6A 175mW 700mohm @ 4.5V
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
11 ns
Forward Transconductance - Min
1 s
Height
0.8 mm
Id - Continuous Drain Current
600 mA
Length
1.6 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SC-89-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
275 mW
Product Type
MOSFET
Qg - Gate Charge
750 pC
Rds On - Drain-Source Resistance
700 mOhms
Rise Time
5 ns
Series
SI1
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel
Transistor Type
1 N Channel
Typical Turn-Off Delay Time
25 ns
Typical Turn-On Delay Time
5 ns
Unit Weight
Vgs - Gate-Source Voltage
4.5 V
Vgs th - Gate-Source Threshold Voltage
450 mV
Width
0.85 mm

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Naujausios apžvalgos

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My package arrived wet, not know where occurs this fact, but working all right
Hello! Order received, very happy. Thank you very much!
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
Seems well have not tested
I received the product right, thank you very much 2018/12/03 ★★★★★
Daugiau

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