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SQ1440EH-T1_GE3

SQ1440EH-T1_GE3
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Dalies numeris
SQ1440EH-T1_GE3
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET 60V Vds +/-20V Vgs AEC-Q101 Qualified
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
30 ns
Forward Transconductance - Min
6 s
Height
1 mm
Id - Continuous Drain Current
1.7 A
Length
2.1 mm
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-363-6
Packaging
Cut Tape
Packaging
MouseReel
Packaging
Reel
Pd - Power Dissipation
3.3 W
Product Type
MOSFET
Qg - Gate Charge
5.5 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
85 mOhms
Rise Time
23 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
10 ns
Typical Turn-On Delay Time
5.8 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
60 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1.5 V
Width
1.25 mm

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Naujausios apžvalgos

Parašykite savo atgaivinimą
it is safe and sound all, thank you seller!
Thank You all fine, packed very well
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
High Quality driver, works excellent. It came to Moscow for 7 days.
Decent quality, not минвелл certainly, but enough decent
Daugiau

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