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TK22A10N1,S4X

TK22A10N1,S4X
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Dalies numeris
TK22A10N1,S4X
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET MOSFET NCh12.2ohm 10V 10uA VDS100V
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Height
15 mm
Id - Continuous Drain Current
22 A
Length
10 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220FP-3
Pd - Power Dissipation
30 W
Product Type
MOSFET
Qg - Gate Charge
28 nC
Rds On - Drain-Source Resistance
11.5 mOhms
Series
TK22A10N1
Technology
SI
Tradename
U-MOSVIII-H
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Unit Weight
Vds - Drain-Source Breakdown Voltage
100 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
4 V
Width
4.5 mm

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Naujausios apžvalgos

Parašykite savo atgaivinimą
Teşekkürler
fast delivery, item as described, thanks!!
Quickly came to CET, all in one package. Look at the rules
Perfectly.
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Daugiau

Tau taip pat gali patikti

TK2205800000G
TK2205800000G
Mėgstamiausia Į Bom
TK223-10.0K-0.1%-10ppm
TK223-10.0K-0.1%-10ppm
Mėgstamiausia Į Bom
TK223-10.0K-0.1%-10ppm
TK223-10.0K-0.1%-10ppm
Mėgstamiausia Į Bom
TK22A10N1,S4X
TK22A10N1,S4X
Mėgstamiausia Į Bom

Žmonės žiūri TK22A10N1,S4X tada nusipirko

TK2205800000G
TK2205800000G
Mėgstamiausia Į Bom
TK223-10.0K-0.1%-10ppm
TK223-10.0K-0.1%-10ppm
Mėgstamiausia Į Bom
TK223-10.0K-0.1%-10ppm
TK223-10.0K-0.1%-10ppm
Mėgstamiausia Į Bom
TK22A10N1,S4X
TK22A10N1,S4X
Mėgstamiausia Į Bom

TK22A10N1,S4X Naujienos

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Susiję raktiniai žodžiai TK22

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  • TK22A10N1,S4X Specifikacija
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  • TK22A10N1,S4X Techniniai duomenys

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