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LN60A01ES-LF-P

LN60A01ES-LF-P
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Dalies numeris
LN60A01ES-LF-P
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET 600V, 3 N-Channel FETs
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Triple
Id - Continuous Drain Current
0.08 A
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 20 C
Moisture Sensitive
Yes
Mounting Style
SMD/SMT
Number of Channels
3 Channel
Package / Case
SOIC-8
Pd - Power Dissipation
1.3 W
Product Type
MOSFET
Rds On - Drain-Source Resistance
190 Ohms
Transistor Polarity
N-Channel
Transistor Type
3 N-Channel
Typical Turn-Off Delay Time
3000 ns
Typical Turn-On Delay Time
50 ns
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
15 V
Vgs th - Gate-Source Threshold Voltage
0.8 V

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Naujausios apžvalgos

Parašykite savo atgaivinimą
it is safe and sound all, thank you seller!
Decent quality, not минвелл certainly, but enough decent
Everything is fine!
Seems well have not tested
Shipping bіlshe mіsyatsya. Chi pratsyuyut not perevіryav.
Daugiau

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