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TK16E60W,S1VX

TK16E60W,S1VX
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Dalies numeris
TK16E60W,S1VX
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET N-Ch 15.8A 130W FET 600V 1350pF 38nC
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
5 ns
Height
15.1 mm
Id - Continuous Drain Current
15.8 A
Length
10.16 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220-3
Pd - Power Dissipation
130 W
Product Type
MOSFET
Qg - Gate Charge
30 nC
Rds On - Drain-Source Resistance
160 mOhms
Rise Time
25 ns
Series
TK16E60W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
100 ns
Typical Turn-On Delay Time
50 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
3.7 V
Width
4.45 mm

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Naujausios apžvalgos

Parašykite savo atgaivinimą
Thank You all fine, packed very well
Everything is excellent! recommend this seller!
Seems well have not tested
and whole all right. the features no more функционалу check.
Product as shown in the description, excellent seller, I recommend this seller.
Daugiau

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