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TK14E65W5,S1X

TK14E65W5,S1X
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Dalies numeris
TK14E65W5,S1X
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET Power MOSFET N-Channel
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
7 ns
Height
15.1 mm
Id - Continuous Drain Current
13.7 A
Length
10.16 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220-3
Packaging
Tube
Pd - Power Dissipation
130 W
Product Type
MOSFET
Qg - Gate Charge
40 nC
Rds On - Drain-Source Resistance
250 mOhms
Rise Time
40 ns
Series
TK14E65W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Typical Turn-Off Delay Time
110 ns
Typical Turn-On Delay Time
90 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
650 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
3 V
Width
4.45 mm

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Naujausios apžvalgos

Parašykite savo atgaivinimą
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
fast delivery
Works. Recommend
Long Service and Russia!
Seems well have not tested
Daugiau

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TK14E65W5,S1X Naujienos

03/15/2023
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Susiję raktiniai žodžiai TK14

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