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TK12E60W,S1VX

TK12E60W,S1VX
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Dalies numeris
TK12E60W,S1VX
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET N-Ch 11.5A 110W FET 600V 890pF 25nC
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
5.5 ns
Height
15.1 mm
Id - Continuous Drain Current
11.5 A
Length
10.16 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220-3
Pd - Power Dissipation
110 W
Product Type
MOSFET
Qg - Gate Charge
25 nC
Rds On - Drain-Source Resistance
300 mOhms
Rise Time
23 ns
Series
TK12E60W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
85 ns
Typical Turn-On Delay Time
23 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
3.7 V
Width
4.45 mm

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Naujausios apžvalgos

Parašykite savo atgaivinimą
Everything is excellent! recommend this seller!
Works. Find the price of this product is very good
Decent quality, not минвелл certainly, but enough decent
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Great product. Arrived ahead of time. Thank you
Daugiau

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Susiję raktiniai žodžiai TK12

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  • TK12E60W,S1VX Platintojas
  • TK12E60W,S1VX PDF
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  • TK12E60W,S1VX Atsisiųsti PDF
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  • TK12E60W,S1VX Specifikacija
  • TK12E60W,S1VX Karšti pasiūlymai
  • TK12E60W,S1VX Pertraukos kaina
  • TK12E60W,S1VX Techniniai duomenys

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