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TK20C60W,S1VQ

TK20C60W,S1VQ
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Dalies numeris
TK20C60W,S1VQ
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET N-Ch DTMOSIV 600 V 165W 1680pF 20A
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
6 ns
Height
10.4 mm
Id - Continuous Drain Current
20 A
Length
10 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-262-3
Pd - Power Dissipation
165 W
Product Type
MOSFET
Qg - Gate Charge
48 nC
Rds On - Drain-Source Resistance
130 mOhms
Rise Time
25 ns
Series
TK20C60W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
100 ns
Typical Turn-On Delay Time
50 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
3.7 V
Width
4.5 mm

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goods very well received very good quality
fast delivery, item as described, thanks!!
Received, Fast shipping, not checked yet
Quick delivery. Secure packing. Excellent product. Thank you
it is safe and sound all, thank you seller!
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