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TK16E60W5,S1VX

TK16E60W5,S1VX
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Dalies numeris
TK16E60W5,S1VX
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET Power MOSFET N-Channel
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
5 ns
Height
15.1 mm
Id - Continuous Drain Current
15.8 A
Length
10.16 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220-3
Packaging
Tube
Pd - Power Dissipation
130 W
Product Type
MOSFET
Qg - Gate Charge
43 nC
Rds On - Drain-Source Resistance
180 mOhms
Rise Time
40 ns
Series
TK16E60W5
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Typical Turn-Off Delay Time
100 ns
Typical Turn-On Delay Time
75 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
3 V
Width
4.45 mm

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Naujausios apžvalgos

Parašykite savo atgaivinimą
Works. Find the price of this product is very good
Shipping a little 1 weeks, normal packing, the procedure is complete.
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Long Service and Russia!
The timer is running. 10 PCS. Packed properly.
Daugiau

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