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HN1C01F-GR(TE85L,F

HN1C01F-GR(TE85L,F
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Specifikacijos

Kategorijos
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
60 V
Collector- Emitter Voltage VCEO Max
50 V
Collector-Emitter Saturation Voltage
0.1 V
Configuration
Dual
Continuous Collector Current
150 mA
DC Collector/Base Gain hfe Min
120
DC Current Gain hFE Max
400
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
80 MHz
Maximum DC Collector Current
150 mA
Mounting Style
SMD/SMT
Package / Case
SOT-26-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
300 mW
Product Type
BJTs - Bipolar Transistors
Series
HN1C01
Technology
SI
Transistor Polarity
NPN
Unit Weight

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Daugiau

Tau taip pat gali patikti

HN1C01F-GR(TE85L,F
HN1C01F-GR(TE85L,F
Mėgstamiausia Į Bom
HN1C01FE-GR,LF
HN1C01FE-GR,LF
Mėgstamiausia Į Bom
HN1C01FE-Y,LF
HN1C01FE-Y,LF
Mėgstamiausia Į Bom
HN1C01FU-GR,LF
HN1C01FU-GR,LF
Mėgstamiausia Į Bom

Žmonės žiūri HN1C01F-GR(TE85L,F tada nusipirko

HN1C01F-GR(TE85L,F
HN1C01F-GR(TE85L,F
Mėgstamiausia Į Bom
HN1C01FE-GR,LF
HN1C01FE-GR,LF
Mėgstamiausia Į Bom
HN1C01FE-Y,LF
HN1C01FE-Y,LF
Mėgstamiausia Į Bom
HN1C01FU-GR,LF
HN1C01FU-GR,LF
Mėgstamiausia Į Bom

HN1C01F-GR(TE85L,F Naujienos

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Susiję raktiniai žodžiai HN1C

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