Dalies numeris HN1C01FE-Y,LF Kategorijos Bipolar Transistors - BJT RoHS Duomenų lapas HN1C01FE-Y,LF apibūdinimas Bipolar Transistors - BJT Transistor for Small Signal Amp
Kategorijos Bipolar Transistors - BJT Collector- Base Voltage VCBO 60 V Collector- Emitter Voltage VCEO Max 50 V Collector-Emitter Saturation Voltage 100 mV Configuration Dual DC Collector/Base Gain hfe Min 120 DC Current Gain hFE Max 400 Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 80 MHz Maximum DC Collector Current 150 mA Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 100 mW Product Type BJTs - Bipolar Transistors Series HN1C01 Technology SI Transistor Polarity NPN Unit Weight