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SQ2325ES-T1_GE3

SQ2325ES-T1_GE3
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Dalies numeris
SQ2325ES-T1_GE3
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET P-Chnl 150-V (D-S) AEC-Q101 Qualified
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
10 ns
Forward Transconductance - Min
2.2 S
Id - Continuous Drain Current
840 mA
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-23-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
3 W
Product Type
MOSFET
Qg - Gate Charge
10 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
1.3 Ohms
Rise Time
14 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
15 ns
Typical Turn-On Delay Time
8 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
150 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
3.5 V

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Naujausios apžvalgos

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thanks for resending, this item is good !
My package arrived wet, not know where occurs this fact, but working all right
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Goods came in two weeks. Well packed. Track number tracked
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Daugiau

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