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SQ3987EV-T1_GE3

SQ3987EV-T1_GE3
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Dalies numeris
SQ3987EV-T1_GE3
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET Dual P-Ch -30V AEC-Q101 Qualified
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
2.2 ns, 2.2 ns
Forward Transconductance - Min
4.2 S, 4.2 S
Id - Continuous Drain Current
3 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
TSOP-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
1.67 W
Product Type
MOSFET
Qg - Gate Charge
12.2 nC, 12.2 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
85 mOhms, 85 mOhms
Rise Time
2.4 ns, 2.4 ns
Series
SQ3987EV
Technology
SI
Transistor Polarity
P-Channel
Transistor Type
2 P-Channel
Typical Turn-Off Delay Time
18.4 ns, 18.4 ns
Typical Turn-On Delay Time
6.6 ns, 6.6 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V

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Naujausios apžvalgos

Parašykite savo atgaivinimą
Отличный продавец . Рекомендую.+++
all exactly and work. радиолюбителя useful set to, thank you)
Everything is excellent! recommend this seller!
High Quality driver, works excellent. It came to Moscow for 7 days.
Decent quality, not минвелл certainly, but enough decent
Daugiau

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03/15/2023
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