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SQ3989EV-T1_GE3

SQ3989EV-T1_GE3
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Dalies numeris
SQ3989EV-T1_GE3
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET Dual P-Channel 30V TSOP-6
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
2 ns
Forward Transconductance - Min
2.2 S
Id - Continuous Drain Current
2.5 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
TSOP-6
Packaging
Reel
Packaging
Cut Tape
Pd - Power Dissipation
1.67 W
Product Type
MOSFET
Qg - Gate Charge
11.1 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
140 mOhms
Rise Time
3 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
P-Channel
Transistor Type
2 P-Channel
Typical Turn-Off Delay Time
13.8 ns
Typical Turn-On Delay Time
5.7 ns
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1.5 V

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Naujausios apžvalgos

Parašykite savo atgaivinimą
Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!
Received, Fast shipping, not checked yet
packed pretty good, all is ok,-seller.
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
Daugiau

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